Measurement of Spontaneous Carrier Lifetime from Stimulated Emission Delays in Semiconductor Lasers
نویسندگان
چکیده
منابع مشابه
Stimulated secondary emission from semiconductor microcavities.
We find strong influence of final-state stimulation on the time-resolved light emission dynamics from semiconductor microcavities after pulsed excitation allowing angle-resonant polariton-polariton scattering on the lower-polariton branch. The polariton dynamics can be controlled by injection of final-state polaritons at densities below a polariton saturation density of 5x10(8) cm(-2). A bosoni...
متن کاملMain resonances in directly modulated semiconductor lasers: effect of spontaneous emission and gain - Optoelectronics, IEE Proceedings-
Boundaries for the primary saddle-node bifurcations related to the main resonances in pump-modulated laser diodes are obtained via numerical simulation. The model explicitly contains the gain saturation and spontaneous emission terms and the authors focus on the effect that these terms have on the large signal modulation regime. It is found that the spontaneous emission term strongly modifies t...
متن کاملMeasurement of Optical Cavity Properties in Semiconductor Lasers by Fourier Analysis of the Emission Spectrum
We present several observations on a novel method for the evaluation of the internal loss properties in semiconductor lasers. The method we use involves Fourier analysis of the Fabry–Perot mode spectrum when operating the device below lasing threshold. The observation of various structural features in the Fourier transform domain allows us to extract important information on the laser cavity. A...
متن کاملCarrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers
We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...
متن کاملTemperature Dependences of Metal-Clad Subwavelength Semiconductor Lasers (MCSELs): Geometric Invariance and the Spontaneous Emission Factor
We perform two analyses on temperature effects in Metal-Clad Subwavelength Semiconductor Lasers (MCSELs). Firstly, we analyze the temperature dependence of the threshold gain in the infinite waveguide approximation. We show that the dielectric layer of the semiconductor-dielectric-metal composite waveguide (CWG) becomes increasingly important as temperature increases. However, we further show t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1972
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1661391